IXTH48P20P
IXTT48P20P
-50
Fig. 1. Output Characteristics
@ 25oC
-160
Fig. 2. Extended Output Characteristics
@ 25oC
-45
-40
V GS = -10V
- 9V
- 8V
-140
V GS = -10V
- 9V
-120
-35
-30
-25
-20
- 7V
- 6V
-100
-80
-60
- 8V
- 7V
-15
-10
-40
- 6V
-5
0
- 5V
-20
0
- 5V
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
-30
V DS - Volts
Fig. 3. Output Characteristics
@ 125oC
V DS - Volts
Fig. 4. R DS(on) Normalized to I D = - 24A vs.
Junction Temperature
-50
V GS = -10V
2.4
-45
- 9V
2.2
V GS = -10V
- 8V
-40
2.0
-35
-30
-25
- 7V
1.8
1.6
1.4
I D = - 48A
I D = - 24A
- 6V
-20
-15
-10
1.2
1.0
0.8
-5
0
- 5V
0.6
0.4
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
-8.0
-50
-25
0
25
50
75
100
125
150
2.8
V DS - Volts
Fig. 5. R DS(on) Normalized to I D = - 24A vs.
Drain Current
-52
-48
T J - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
V GS = -10V
T J = 125oC
-44
-40
-36
-32
-28
1.8
1.6
1.4
-24
-20
-16
1.2
1.0
0.8
T J = 25oC
-12
-8
-4
0
0
-20
-40
-60
-80
-100
-120
-140
-160
-50
-25
0
25
50
75
100
125
150
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
T J - Degrees Centigrade
相关PDF资料
IXTH500N04T2 MOSFET N-CH 40V 500A TO-247
IXTH50N20 MOSFET N-CH 200V 50A TO-247AD
IXTH52P10P MOSFET P-CH 100V 52A TO-247
IXTH5N100A MOSFET N-CH 1000V 5A TO247AD
IXTH60N10 MOSFET N-CH 100V 60A TO-247
IXTH60N15 MOSFET N-CH 150V 60A TO-247
IXTH60N25 MOSFET N-CH 250V 60A TO-247
IXTH6N100D2 MOSFET N-CH 1000V 6A TO247
相关代理商/技术参数
IXTH4N150 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH500N04T2 功能描述:MOSFET TRENCHT2 PWR MOSFET 40V 500A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50N15 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 50A I(D) | TO-218VAR
IXTH50N20 功能描述:MOSFET 50 Amps 200V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50N20 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH50N25T 功能描述:MOSFET Trench Gate Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50N30 功能描述:MOSFET 59 Amps 300V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH50P085 功能描述:MOSFET -50 Amps - 500 V 0.055 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube